STTH200W04TV1 datasheet(3/8 Pages) STMICROELECTRONICS

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STTH200W04TV1

Characteristics

Doc ID 023217 Rev 2

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Table 5.

Dynamic electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

QRR

Reverse recovery

charge

Tj = 125 °C

IF = 100 A, VR = 320 V

dIF/dt = -200 A/µs

0.9

µC

Sfactor

Softness factor

0.3

IRM

Reverse recovery

current

trr

Reverse recovery

time

Tj = 25 °C

IF = 1 A, VR = 30 V

dIF/dt = -100 A/µs

tfr

Forward recovery

time

Tj = 25 °C

IF = 100 A, dIF/dt = 100 A/µs

VFR = 2 V

2µs

VFP

Forward recovery

voltage

3.0

4.5

Figure 1.

Conduction losses versus

average forward current (per diode)

Figure 2.

Forward voltage drop versus

forward current (per diode)

100

120

140

160

180

200

100

120

140

δ=0.05 δ=0.1 δ=0.2

δ=0.5

δ=1

δ=tp/T

I F(AV) (A)

PF(AV)(W)

IFM (A )

0.1

1.0

10.0

100.0

1000.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

j=25°C

(Maximum values)

j=150°C

(Maximum values)

j=150°C

(Maximum values)

j=150°C

(Typical values)

j=150°C

(Typical values)

V FM (V)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt

(typical values, per diode)

t h (j-c)

th ( j - c )

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

t P (s)

(A )

100

150

200

250

300

350

400

450

500

IF = I F(AV)

VR = 320 V

Tj = 125 °C

dI F /dt(A/µs)

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