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STTH200W04TV1 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STTH200W04TV1
Description  Turbo 2 ultrafast high voltage rectifier
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH200W04TV1 Datasheet(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH200W04TV1
4/8
Doc ID 023217 Rev 2
Figure 5.
Reverse recovery time versus
dIF/dt (typical values, per diode)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values, per diode)
t rr (n s )
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
300
350
400
450
500
IF =IF(AV)
VR= 320 V
Tj =125 °C
dI
F
/dt(A/µs)
0
200
400
600
800
1000
1200
1400
1600
1800
0
50
100
150
200
250
300
350
400
450
500
dI
F
/dt(A/µs)
Q
(n C )
rr
IF = IF(AV)
VR= 320 V
Tj =125 °C
Figure 7.
Reverse recovery softness factor
versus dIF/dt
(typical values, per diode)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
0.0
0.1
0.2
0.3
0.4
0.5
0
50
100
150
200
250
300
350
400
450
500
dI F /dt(A/µs)
IF = IF(AV)
VR= 320 V
Tj =125 °C
SFactor
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
Tj(°C)
IF =IF(AV)
VR=320 V
Reference: Tj =125°C
IRM
SFACTOR
QRR
Figure 9.
Transient peak forward voltage
versus dIF/dt
(typical values, per diode)
Figure 10.
Forward recovery time versus dIF/dt
(typical values, per diode)
V FP (V )
0
2
4
6
8
10
0
50
100
150
200
250
300
350
400
450
500
dI F /dt(A/µs)
IF = IF(AV)
T
j = 125°C
t fr (ns)
0
200
400
600
800
1000
1200
1400
1600
1800
0
50
100
150
200
250
300
350
400
450
500
IF = I F(AV)
VFR = 2 V
Tj =125 °C
dI F /dt(A/µs)



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