STW88N65M5-4 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STW88N65M5-4

Description	Excellent switching performance thanks to the extra driving source pin

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 13 page

Doc ID 027754 Rev 1

3/13

STW88N65M5-4

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

50.5

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

336

PTOT

Total dissipation at TC = 25 °C

450

IAR

Max. current during repetitive or single pulse

avalanche (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

2000

dv/dt (2)

ISD ≤ 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max.

0.28

°C/W

Rthj-amb Thermal resistance junction-ambient max.

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