STW88N65M5-4 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	STW88N65M5-4

Description	Excellent switching performance thanks to the extra driving source pin

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 13 page

Doc ID 027754 Rev 1

5/13

STW88N65M5-4

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(V)

Voltage delay time

VDD = 400 V, ID = 56 A

RG = 7.2 Ω VGS = 10 V

(see Figure 17 and 20)

150

tr(V)

Voltage rise time

tf(i)

Current fall time

tc(off)

Crossing time

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

336

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 84 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 84 A,

di/dt = 100 A/µs

VDD = 100 V (see Figure 17)

544

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 84 A,

di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 17)

660

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

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