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RF430CL330HCPWR Datasheet(PDF) 7 Page - Texas Instruments |
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RF430CL330HCPWR Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 47 page ![]() RF430CL330H www.ti.com SLAS916C – NOVEMBER 2012 – REVISED NOVEMBER 2014 4.5 Supply Currents over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT SPI, fSCK,MAX, SO = Open, ICC(SPI) 3.3 V 250 µA Writing into NDEF memory I2C, 400 kHz, Writing into NDEF ICC(I2C) 3.3 V 250 µA memory ICC(RF enabled) RF enabled, no RF field present 3.3 V 40 µA Standby enable = 0, RF disabled, ICC(Inactive) 3.3 V 15 µA no serial communication Standby enable = 1, RF disabled, ICC(Standby) 3.3 V 10 45 µA no serial communication Additional current consumption ΔICC(StrongRF) 3.0 V to 3.6 V 160 µA with strong RF field present Current drawn from VCC < 3.0 V ICC(RF,lowVCC) with RF field present (passive 2.0 V to 3.0 V 0 µA operation) 4.6 Digital Inputs over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT 0.3× VIL Low-level input voltage V VCC 0.7× VIH High-level input voltage V VCC 0.1× VHYS Input hysteresis V VCC IL High-impedance leakage current 3.3 V -50 50 nA RPU(RST) Integrated RST pullup resistor 20 35 50 k Ω Integrated SCMS/CS pullup resistor (only active during RPU(CS) 20 35 50 k Ω initialization) 4.7 Digital Outputs over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT 3 V 0.4 VOL Output low voltage IOL = 3 mA 3.3 V 0.4 V 3.6 V 0.4 3 V 2.6 VOH Output high voltage IOH = -3 mA 3.3 V 2.9 V 3.6 V 3.2 Copyright © 2012–2014, Texas Instruments Incorporated Specifications 7 Submit Documentation Feedback Product Folder Links: RF430CL330H |
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