SPU07N60C2 datasheet(1/11 Pages) INFINEON

Part #	SPU07N60C2

Description	Cool MOS??Power Transistor

PDF	11 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2002-10-07

Page 1

SPD07N60C2

SPU07N60C2

Final data

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Worldwide best R

DS(on) in TO-251 and TO-252

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved noise immunity

Product Summary

VDS

600

V

RDS(on)

0.6

Ω

ID

7.3

A

P-TO251

P-TO252

Type

Package

Ordering Code

SPD07N60C2

P-TO252

Q67040-S4312

SPU07N60C2

P-TO251

Q67040-S4311

Marking

07N60C2

Maximum Ratings, at TC = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

7.3

4.6

A

Pulsed drain current, tp limited by Tjmax

ID puls

14.6

Avalanche energy, single pulse

ID=5.5A, VDD=50V

EAS

230

mJ

Avalanche energy, repetitive tAR limited by Tjmax1)

ID=7.3A, VDD=50V

EAR

0.5

Avalanche current, repetitive tAR limited by Tjmax

IAR

7.3

A

Reverse diode dv/dt

IS=7.3A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C

dv/dt

6

V/ns

Gate source voltage

VGS

±20

V

Power dissipation, TC = 25°C

Ptot

83

W

Operating and storage temperature

Tj , Tstg

-55... +150

°C

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