CPDVR105V0USP-HF

Page 1

QW-JP041

REV:A

Comchip Technology CO., LTD.

SLP2510P8

Dimensions in inches and (millimeter)

0.102(2.60)

0.094(2.40)

0.043(1.10)

0.035(0.90)

0.010(0.25)

0.026(0.65)

0.020(0.50)

0.02(0.50)BSC

O

Symbol

Typ

Parameter

Min

Max

Unit

Junction capacitance

Conditions

Breakdown voltage

V

Reverse Leakage current

uA

0.4

pF

6.0

1.0

Clamping voltage

ESD capability

kV

±15

Peak pulse power

W

150

Storage temperature range

Junction temperature range

150

°C

°C

150

-55

V

15

IEC 61000-4-2(Air)

IEC 61000-4-2(Contact)

±8

kV

RoHS Device

Mechanical data

- Case: SLP2510P8 small outline plastic package

- Terminals: Matte tin plated, solderable per

MIL-STD-202,method 208

- Mounting Compound Flammability Rating: UL 94V-0

- Weight: 0.015 grams(approx.).

- High temperature soldering guaranteed:

260°C/10 second

0.006(0.15)

-55

0.002(0.05)

0.000(0.00)

Reverse working voltage

5.0

V

Features

- Protects four high speed I/O lines

- Working Voltage: 5V

- Low clamping voltage

- IEC61000-4-2 Level 4 ESD Protection.

- IEC61000-4-4 Level 4 FET protection.

- Low leakage current

I/O Pins to GND (Note 1)

Junction capacitance

0.8

pF

Halogen Free

Low Capacitance ESD Protection Array

0.018(0.45)

0.014(0.35)

Company reserves the right to improve product design , functions and reliability without notice.

1

2

3

4

5

10

9

8

7

6

Circuit Diagram

Tp=8/20µs waveform

Note: 1. ESD devices are normally selected according to the working peak reverse voltage (VRWM), which should

be equal or greater than the DC or continuous peak operating voltage level.