09/2013

ALT5020

ALT5020

High Efficiency

UMTS E800 (Band 20)

LTE Linear PAM

ADvAnceD proDucT informATion - rev 0.0

10 pin 3 mm x 3 mm x 0.9 mm

Surface mount module

figure 1: Block Diagram

feATureS

• LTE Compliant

• High Efficiency (LTE waveform):

• Optimized for SMPS Supply

• Low Leakage Current in Shutdown Mode: <5 µA

• Internal Voltage Regulator

• Integrated “daisy chainable” directional coupler

• Optimized for a 50 Ω System

• Internal DC blocks on IN/OUT RF ports

• 1.8 V Control Logic

AppLicATionS

• Wireless Handsets and Data Devices for:

• LTE (B20)

proDucT DeScripTion

The ALT5020 PA is designed to provide highly linear

output for LTE handsets and data devices with high

efficiency at high power mode. This ANADIGICS PA

can be used with an external switch mode power

supply (SMPS) to improve its efficiency and reduce

current consumption further at high and low output

powers. The device is manufactured on an advanced

InGaP HBT MMIC technology offering state-of-the-

art reliability, temperature stability, and ruggedness.

There are three selectable bias modes that optimize

efficiency for different output power levels, and a

shutdown mode with low leakage current, which

increases handset talk and standby time. The self-

contained 3 mm x 3 mm x 0.9 mm surface mount

package incorporates matching networks optimized for

output power, efficiency, and linearity in a 50 Ω system.

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GND

Bias Control

Voltage Regulation

CPL

GND at Slug (pad)