DS1921 datasheet(40/44 Pages) DALLAS

40 / 44 page

DS1921H/Z

40 of 44

PHYSICAL SPECIFICATION

Size

See mechanical drawing

Weight

3.3g

Safety

Meets UL#913 (4

th Edit.); Intrinsically Safe

Apparatus, approval under Entity Concept for use in

Class I, Division 1, Group A, B, C and D Locations

(application pending)

ABSOLUTE MAXIMUM RATINGS*

IO Voltage to GND

-0.5V, +6V

IO Sink Current

20mA

Temperature Range DS1921H, DS1921Z

-40°C to +85°C**

Storage Temperature Range

-40°C to +50°C**

This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods of time may affect reliability.

** Storage or operation above 50°C significantly reduces battery life.

ELECTRICAL CHARACTERISTICS

(VPUP = 2.8V to 5.25V, TA = -40°C to +85°C)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS NOTES

IO pin general data

1-Wire Pull-Up

Resistance

RPUP

2.2

Ω

1, 2

Input Capacitance

CIO

100

800

3, 16

Input Load Current

IO pin at VPUP

µA

High-to-Low

VTL

VPUP > 4.5V

1.14

2.70

5, 6, 7,

Switching Threshold

0.71

2.70

Input Low Voltage

VIL

0.30

1, 5, 8

Low-to-High

VTH

VPUP > 4.5V

1.00

2.70

5, 6, 9,

Switching Threshold

0.66

2.70

Output low voltage at

4mA

VOL

0.4

5, 10

Recovery Time

tREC

Standard Speed,

RPUP = 2.2k

Ω

µs

1, 16

Overdrive Speed,

RPUP = 2.2k

Ω

Overdrive Speed,

directly prior to reset

pulse; RPUP = 2.2k

Ω

Timeslot Duration

tSLOT

Standard Speed

µs

1, 15

Overdrive Speed

DS1921 Datasheet(PDF) 40 Page - Dallas Semiconductor

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