DMN10H170SVT datasheet(2/6 Pages) DIODES

2 / 6 page

DMN10H170SVT

Document number: DS37196 Rev. 2 - 2

2 of 6

www.diodes.com

February 2015

DMN10H170SVT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

100

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

2.6

2.1

Pulsed Drain Current (10

μs pulse, duty cycle ≦1%)

IDM

11.2

Maximum Body Diode Continuous Current (Note 6)

2.0

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

1.2

(Note 6)

1.7

Thermal Resistance, Junction to Ambient

(Note 5)

RJA

101

°C/W

(Note 6)

Thermal Resistance, Junction to Case

(Note 6)

RJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100



VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS



1.0

µA

VDS = 100V, VGS = 0V

Gate-Body Leakage

IGSS



±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

1.0

2.0

3.0

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS (ON)



115

160

VGS = 10V, ID = 5.0A



124

200

VGS = 4.5V, ID = 5.0A

Diode Forward Voltage

VSD



0.9



1.0



VGS = 0V, IS = 10A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



1,167



VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



Gate Resistance



1.3



VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)



4.9



VDS = 80V, ID = 12.8A

Total Gate Charge (VGS = 10V)



9.7



Gate-Source Charge

Qgs



2.0



Gate-Drain Charge

Qgd



2.0



Turn-On Delay Time

tD(on)



VDD = 50V, VGS = 10V,

RG = 25Ω, ID = 12.8A

Turn-On Rise Time



Turn-Off Delay Time

tD(off)



Turn-Off Fall Time



Reverse Recovery Time

trr



VGS = 0V, IS=12.8A, di/dt=100A/µs

Reverse Recovery Charge

Qrr



Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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