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DMN10H170SVT Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN10H170SVT
Description  Low Gate Threshold Voltage
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN10H170SVT Datasheet(HTML) 4 Page - Diodes Incorporated

  DMN10H170SVT Datasheet HTML 1Page - Diodes Incorporated DMN10H170SVT Datasheet HTML 2Page - Diodes Incorporated DMN10H170SVT Datasheet HTML 3Page - Diodes Incorporated DMN10H170SVT Datasheet HTML 4Page - Diodes Incorporated DMN10H170SVT Datasheet HTML 5Page - Diodes Incorporated DMN10H170SVT Datasheet HTML 6Page - Diodes Incorporated  
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DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
4 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN10H170SVT
T , JUNCTION TEMPERATURE (°C)
J
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
I = 250µA
D
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
T = 25 C
A
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
1
10
100
1000
10000
0
10
20
30
40
Ciss
Coss
Crss
f = 1MHz
Q , TOTAL GATE CHARGE (nC)
g
Figure 10 Gate-Charge Characteristics
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
V
= 80V
DS
I
= 12.8A
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11 SOA, Safe Operation Area
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
P
= 100µs
W
P
= 1ms
W
P
= 10ms
W
P
= 100ms
W
P
= 1s
W
P
= 10s
W
DC
RDS(on)
Limited
T
= 150°C
J (m ax )
T = 25°C
A
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board



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