T1235H datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

T1235H Series

2/7

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

STATIC CHARACTERISTICS

Note 1: minimum IGT is guaranted at 10% of IGT max.

Note 2: for both polarities of A2 referenced to A1

THERMAL RESISTANCES

S: Copper surface under tab

PRODUCT SELECTOR

Symbol

Test Conditions

Quadrant

Value

Unit

IGT (1)

VD = 12 V

RL = 33 Ω

I - II - III

MAX.

VGT

I - II - III

MAX.

1.3

VGD

VD = VDRM RL = 3.3 kΩ Tj = 150°C

I - II - III

MIN.

0.15

IH (2)

IT = 100 mA

MAX.

IG = 1.2 IGT

I - III

MAX.

dV/dt (2)

VD = 67 % VDRM gate open Tj = 150°C

MIN.

300

V/µs

(dI/dt)c (2)

Without snubber

Tj = 150°C

MIN.

5.3

A/ms

Symbol

Test Conditions

Value

Unit

VTM (2)

ITM = 17 A

tp = 380 µs

Tj = 25°C

MAX.

1.5

Vto (2)

Threshold voltage

Tj = 150°C

MAX.

0.80

Rd (2)

Dynamic resistance

Tj = 150°C

MAX.

Ω

IDRM

IRRM

VDRM = VRRM

Tj = 25°C

MAX.

5µA

Tj = 150°C

5.5

VD/VR = 400 V (at mains peak voltage)

Tj = 150°C

3.5

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

²PAK

TO-220AB

1.2

°C/W

Rth(j-a)

Junction to ambient

S = 1 cm

²PAK

°C/W

TO-220AB

Part Number

Voltage

Sensitivity

Type

Package

T1235H-600G

600 V

35 mA

Snubberless

D²PAK

T1235H-600T

600 V

35 mA

Snubberless

TO-220AB

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