T1235H Series

4/7

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

Fig. 5: Surge peak on-state current versus

number of cycles.

Fig. 6:

Non-repetitive

surge peak on-state

current

for

a

sinusoidal

pulse

with

width

tp < 10ms, and corresponding value of I²t.

Fig.

7:

On-state

characteristics

(maximum

values).

Fig. 8:

Relative variation of critical rate of

decrease

of

main

current

versus

junction

temperature (typical values).

Fig. 9: Relative variation of critical rate of decrease

of main current versus (dV/dt)c (typical values).

-40

-20

0

20

40

60

80

100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

Tj(°C)

IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]

IGT

IH & IL

1

10

100

1000

0

25

50

75

100

125

150

Number of cycles

ITSM(A)

Non repetitive

Tj initial=25°C

Repetitive

Tc=135°C

One cycle

t=20ms

0.01

0.10

1.00

10.00

100

1000

2000

tp(ms)

ITSM(A),I²t(A²s)

Tj initial=25°C

ITSM

I²t

dI/dt limitation:

50A/µs

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

1

10

100

200

VTM(V)

ITM(A)

Tj=25°C

Tj max.

Vto = 0.80 V

Rd = 25 m

Ω

Tj max.

25

50

75

100

125

150

0

1

2

3

4

5

6

7

8

Tj(°C)

(dI/dt)c [Tj] / (dI/dt)c [Tj=150°C]

0.1

1.0

10.0

100.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c