UCD2003B datasheet(4/24 Pages) TI1

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ULN2003B

SLRS064B – JUNE 2014 – REVISED AUGUST 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.

(3)

Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient

temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.

(4)

The package thermal impedance is calculated in accordance with JESD 51-7.

6 Specifications

6.1 Absolute Maximum Ratings

at 25°C free-air temperature (unless otherwise noted)

(1)

MIN

MAX

UNIT

VCC

Collector-emitter voltage

Clamp diode reverse voltage(2)

Input voltage(2)

Peak collector current(3)(4)

500

IOK

Output clamp current

500

Total emitter-terminal current

–2.5

Operating virtual junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

2000

Charged device model (CDM), per JEDEC specification JESD22-C101(2)

500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VCC

Supply Voltage

Operating free-air temperature

–40

105

°C

Junction Temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

ULN2003B

UNIT

PW (TSSOP)

D (SOIC)

N (PDIP)

16 PINS

RθJA

Junction-to-ambient thermal resistance

105.5

81.2

49.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

38.3

36.2

°C/W

RθJB

Junction-to-board thermal resistance

50.9

38.6

29.2

°C/W

ψJT

Junction-to-top characterization parameter

4.1

10.5

20.2

°C/W

ψJB

Junction-to-board characterization parameter

50.3

38.3

29.5

°C/W

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