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SI7336DP Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SI7336DP
Description  N-Channel 30-V (D-S) MOSFET
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7336DP Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D Ultra-Low On-Resistance Using High Density
TrenchFETr Gen II Power MOSFET Technology
D Qg Optimized
D New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
D 100% Rg Tested
APPLICATIONS
D Low-Side DC/DC Conversion
− Notebook
− Server
− Workstation
D Synchronous Rectifier, POL
Si7336DP
Vishay Siliconix
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
30
0.00325 @ VGS = 10 V
30
36
30
0.0042 @ VGS = 4.5 V
27
36
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7336DP-T1
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
30
18
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
25
15
Pulsed Drain Current (10 ms Pulse Width)
IDM
70
A
Continuous Source Current (Diode Conduction)a
IS
4.5
1.8
Avalanche Current
L = 1.0 mH
IAS
50
Maximum Power Dissipationa
TA = 25_C
PD
5.4
1.9
W
Maximum Power Dissipationa
TA = 70_C
PD
3.4
1.2
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambienta
t v 10 sec
R
18
23
Maximum Junction-to-Ambienta
Steady State
RthJA
50
65
_C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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