SI7336DP datasheet(4/5 Pages) VISHAY

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Si7336DP

Vishay Siliconix

www.vishay.com

Document Number: 72415

S-41795—Rev. C, 04-Oct-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

−1.0

−0.8

−0.6

−0.4

−0.2

−0.0

0.2

0.4

−50

−25

100

125

150

ID = 250 mA

Threshold Voltage

TJ − Temperature (_C)

Safe Operating Area, Junction-to-Case

100

0.01

100

0.01

1 s

0.1

TC = 25_C

Single Pulse

10 ms

100 ms

0.1

Limited by rDS(on)*

10 s

1 ms

120

200

Single Pulse Power

Time (sec)

160

110

0.1

0.01

0.001

10−3

10−2

600

10−1

10−4

100

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 50_C/W

3. TJM − TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

VDS − Drain-to-Source Voltage (V)

*VGS u minimum VGS at which rDS(on) is specified

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