SI7336DP datasheet(3/5 Pages) VISHAY

3 / 5 page

Si7336DP

Vishay Siliconix

Document Number: 72415

S-41795—Rev. C, 04-Oct-04

www.vishay.com

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

1000

2000

3000

4000

5000

6000

7000

0.000

0.001

0.002

0.003

0.004

0.005

10203040

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

100

125

150

Crss

VDS = 15 V

ID = 20 A

VGS = 10 V

ID = 25 A

VGS = 10 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

VDS − Drain-to-Source Voltage (V)

ID − Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

VGS = 4.5 V

1.0

1.2

0.000

0.003

0.006

0.009

0.012

0.015

2468

0.1

ID = 25 A

0.00

0.2

0.4

0.6

0.8

TJ = 150_C

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

Coss

Ciss

TJ = 25_C

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