TPC8003 datasheet(1/7 Pages) TOSHIBA

Part #	TPC8003

Description	Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

PDF	7 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TPC8003

2004-07-06

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

TPC8003

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

Small footprint due to small and thin package

Low drain−source ON resistance : RDS (ON) = 5.4 mΩ (typ.)

High forward transfer admittance : |Yfs| = 21 S (typ.)

Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)

Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

13

Drain current

Pulse (Note 1)

IDP

52

A

Drain power dissipation

(t = 10 s)

(Note 2a)

PD

2.4

W

Drain power dissipation

(t = 10 s)

(Note 2b)

PD

1.0

W

Single pulse avalanche energy

(Note 3)

EAS

220

mJ

Avalanche current

IAR

13

A

Repetitive avalanche energy

(Note 2a) (Note 4)

EAR

0.24

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1, Note 2, Note 3 and Note 4: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

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