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PXFC211507SC Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # PXFC211507SC
Description  Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz
PDF  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PXFC211507SC Datasheet(HTML) 3 Page - Infineon Technologies AG

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Data Sheet
3 of 9
Rev. 02, 2015-03-03
PXFC211507SC
Typical Performance (data taken in a production test fixture)
0
8
16
24
32
40
48
56
14
15
16
17
18
19
20
21
29
33
37
41
45
49
53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD = 28 V, VGS = 2.6 V,
I
DQ = 960 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
Gain
Efficiency
c211507sc-gr1b
0
8
16
24
32
40
48
56
14
15
16
17
18
19
20
21
29
33
37
41
45
49
53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD = 28 V, VGS = 2.6 V,
I
DQ = 960 mA, ƒ = 2165 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
Gain
Efficiency
c211507sc-gr1c
0
10
20
30
40
50
-65
-55
-45
-35
-25
-15
29
33
37
41
45
49
53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD = 28 V, VGS = 2.6 V,
I
DQ = 960 mA, ƒ = 2115 MHz
3GPP WCDMA signal: 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
IMD Low
IMD Up
ACPR
Efficiency
c211507sc-gr2a
0
10
20
30
40
50
-65
-55
-45
-35
-25
-15
29
33
37
41
45
49
53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD = 28 V, VGS = 2.6 V,
I
DQ = 960 mA, ƒ = 2140 MHz
3GPP WCDMA signal: 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
IMD Low
IMD Up
ACPR
Efficiency
c211507sc-gr2b



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