PXFC211507SC datasheet(2/9 Pages) INFINEON

Part #	PXFC211507SC

Description	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 9 page

PXFC211507SC

Data Sheet

2 of 9

Rev. 02, 2015-03-03

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

—

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

µA

VDS = 63 V, VGS = 0 V

IDSS

—

µA

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

µA

On-State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.05

—



Operating Gate Voltage

VDS = 28 V, IDQ = 960 mA

VGS

2.3

2.6

2.9

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGS

–6 to +10

Operating Voltage

VDD

0 to +32

Junction Temperature

225

°C

Storage Temperature Range

TSTG

–65 to +150

°C

Thermal Resistance (TCASE = 70°C, 150 W CW, 28 V)

θJC

0.56

°C/W

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PXFC211507SC V1 R250

PXFC211507SCV1R250XTMA1

H-37248G-4/2, earless ﬂange,

Tape & Reel, 250 pcs

formed leads

PXFC211507SC Datasheet(PDF) 2 Page - Infineon Technologies AG

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