ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 9

Rev. 02, 2015-03-03

PXFC211507SC

Thermally-Enhanced High Power RF LDMOS FET

150 W, 28 V, 2110 – 2170 MHz

Description

The PXFC211507SC is a 150-watt LDMOS FET intended for use

in multi-standard cellular power amplifier applications in the 2110

to 2170 MHz frequency band. Features include input and out-

put matching, high gain and a thermally-enhanced package with

earless flanges. Manufactured with Infineon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

PXFC211507SC

Package H-37248G-4/2

(formed leads)

Features

•

Broadband internal input and output matching

•

Typical Pulsed CW performance, 2170 MHz, 28 V,

10 µs pulse width, 10% duty cycle

- Efficiency = 56%

- Gain = 19 dB

•

Typical single-carrier WCDMA performance, 2170

MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model

1 with 64DPCH

- Output power = 32 W

- Efficiency = 32%

- Gain = 20 dB

•

Capable of handling 10:1 VSWR @28 V, 150 W

(CW) output power

•

Integrated ESD protection

•

ESD Rating: Human Body Model, Class 2 (per

ANSI/ESDA/JEDEC JS-001

•

Low thermal resistance

•

Pb-free and RoHS compliant

RF Characteristics

bandwidth, 8 dB peak/average @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

19

20.4

—

dB

Drain Efficiency



D

29

32.9

—

%

Intermodulation Distortion

IMD

—

–30.5

–28

dBc

0

8

16

24

32

40

48

56

14

15

16

17

18

19

20

21

29

33

37

41

45

49

53

Output Power (dBm)

Two-carrier WCDMA Drive-up

V

I

3GPP WCDMA signal, 8 dB PAR,

10 MHz carrier spacing, 3.84 MHz BW

Gain

Efficiency

c211507sc-gr1a