2SB1572 datasheet(1/4 Pages) NEC

Part #	2SB1572

Description	PNP SILICON EPITAXIAL TRANSISTOR

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Manufacturer	NEC [NEC]

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©

2001

PNP SILICON EPITAXIAL TRANSISTOR

2SB1572

PNP SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No.

D11204EJ3V0DS00 (3rd edition)

Date Published

July 2001 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

• Low VCE(sat): VCE(sat)1 ≤ −0.4 V

• Complementary to 2SD2403

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

−80

V

Collector to Emitter Voltage

VCEO

−60

V

Emitter to Base Voltage

VEBO

−6.0

V

Collector Current (DC)

IC(DC)

−3.0

A

Collector Current (pulse)

Note1

IC(pulse)

−5.0

A

Base Current (DC)

IB(DC)

−0.2

A

Base Current (pulse)

Note1

IB(pulse)

−0.4

A

Total Power Dissipation

Note2

PT

2.0

W

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

–55 to + 150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 16 cm

2 x 0.7 mm

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB =

−80 V, IE = 0

−100

nA

Emitter Cut-off Current

IEBO

VEB =

−6.0 V, IC = 0

−100

nA

DC Current Gain

Note

hFE1

VCE =

−2.0 V, IC = −0.1 A

80

−

hFE2

VCE =

−2.0 V, IC = −1.0 A

100

200

400

−

Base to Emitter Voltage

Note

VBE

VCE =

−2.0 V, IC = −0.1 A

−0.63

−0.685

−0.73

V

Collector Saturation Voltage

Note

VCE(sat)1

IC =

−2.0 A, IB = −0.1 A

−0.2

−0.4

V

Collector Saturation Voltage

Note

VCE(sat)2

IC =

−3.0 A, IB = −0.15 A

−0.3

−0.6

V

Base Saturation Voltage

Note

VBE(sat)

IC =

−2.0 A, IB = −0.1 A

−0.89

−1.2

V

Gain Bandwidth Product

fT

VCE =

−10 V, IE = 0.3 A

160

MHz

Output Capacitance

Cob

VCB =

−10 V, IE = 0, f = 1.0 MHz

45

pF

Turn-on Time

ton

IC =

−1.0 A, VCC = −10 V,

155

ns

Storage Time

tstg

RL = 5.0

Ω, IB1 = −IB2 = −0.1 A,

510

ns

Fall Time

tf

35

ns

Note Pulsed: PW

≤ 350

µs, Duty Cycle ≤ 2%

hFE CLASSFICATION

Marking

HX

HY

HZ

hFE2

100 to 200

160 to 320

200 to 400

PACKAGE DRAWING (Unit: mm)

1.6±0.2

4.5±0.1

0.42

±0.06

1.5

0.42

±0.06

0.47

±0.06

3.0

0.41

+0.03

–0.05

1.5±0.1

E

C

B

E: Emitter

C: Collector (Fin)

B: Base

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