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STM32F334X4 Datasheet(PDF) 51 Page - STMicroelectronics |
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STM32F334X4 Datasheet(HTML) 51 Page - STMicroelectronics |
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51 / 115 page ![]() DocID025409 Rev 5 51/115 STM32F334x4 STM32F334x6 STM32F334x8 Electrical characteristics 100 6.3.4 Embedded reference voltage The parameters given in Table 23 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 19. Table 22. Programmable voltage detector characteristics Symbol Parameter Conditions Min.(1) 1. Data based on characterization results only, not tested in production. Typ. Max.(1) Unit VPVD0 PVD threshold 0 Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 VPVD1 PVD threshold 1 Rising edge 2.19 2.28 2.37 Falling edge 2.09 2.18 2.27 VPVD2 PVD threshold 2 Rising edge 2.28 2.38 2.48 Falling edge 2.18 2.28 2.38 VPVD3 PVD threshold 3 Rising edge 2.38 2.48 2.58 Falling edge 2.28 2.38 2.48 VPVD4 PVD threshold 4 Rising edge 2.47 2.58 2.69 Falling edge 2.37 2.48 2.59 VPVD5 PVD threshold 5 Rising edge 2.57 2.68 2.79 Falling edge 2.47 2.58 2.69 VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 Falling edge 2.56 2.68 2.8 VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 Falling edge 2.66 2.78 2.9 VPVDhyst(2) 2. Guaranteed by design, not tested in production. PVD hysteresis - - 100 - mV IDD(PVD) PVD current consumption - - 0.15 0.26 µA Table 23. Embedded internal reference voltage Symbol Parameter Conditions Min. Typ. Max. Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.20 1.23 1.25 V TS_vrefint ADC sampling time when reading the internal reference voltage -2.2 - - µs VRERINT Internal reference voltage spread over the temperature range VDD = 31.8 V ±10 mV - - 10(1) 1. Guaranteed by design, not tested in production. mV TCoeff Temperature coefficient - - - 100(1) ppm/°C |
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