TPC8401

2002-05-17

1

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)

TPC8401

Lithium Ion Secondary Battery Applications

Portable Equipment Applications

Notebook PCs

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement−mode

Rating

Characteristics

Symbol

P Channel N Channel

Unit

Drain-source voltage

−30

30

V

−30

30

V

Gate-source voltage

±20

±20

V

DC

(Note 1)

−4.5

6

Drain current

Pulse

(Note 1)

−18

24

A

Single-device operation

(Note 3a)

1.5

1.5

Drain power

dissipation

(t = 10s)

(Note 2a)

Single-device value at

dual operation (Note 3b)

1.0

1.0

Single-device operation

(Note 3a)

0.75

0.75

Drain power

dissipation

(t = 10s)

(Note 2b)

Single-device value at

dual operation (Note 3b)

0.45

0.45

W

Single pulse avalanche energy

26.3

(Note 4a)

46.8

(Note 4b)

mJ

Avalanche current

−4.5

6

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, 3b, 5)

0.10

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration