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M30LW128D Datasheet(PDF) 17 Page - STMicroelectronics |
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M30LW128D Datasheet(HTML) 17 Page - STMicroelectronics |
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17 / 57 page ![]() 17/57 M30LW128D COMMAND INTERFACE All Bus Write operations to the device are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. As the device contains two internal memo- ries care must be taken to issue the commands to the correct address. Commands issued with A23 High will be addressed to the Upper Memory, com- mands issued with A23 Low will be addressed to the Lower Memory. The Commands are summarized in Table 5, Com- mands. Refer to Table 5 in conjunction with the text descriptions below. After power-up or a Reset operation the device en- ters Read mode. Read Memory Array Command. The Read Mem- ory Array command is used to return the device to Read mode. One Bus Write cycle is required to is- sue the Read Memory Array command and return the device to Read mode. Once the command is issued the device remains in Read mode until an- other command is issued. From Read mode Bus Read operations will access the memory arrays. After power-up or a reset the device defaults to Read Array mode (Page Read). While the Program/Erase Controller is executing a Program, Erase, Block Protect, Blocks Unprotect or Protection Register Program operation the de- vice will not accept the Read Memory Array com- mand until the operation completes. Read Electronic Signature Command. The Read Electronic Signature command is used to read the Manufacturer Code, the Device Code, the Block Protection Status and the Protection Register. One Bus Write cycle is required to issue the Read Electronic Signature command. Once the com- mand is issued subsequent Bus Read operations read the Manufacturer Code, the Device Code, the Block Protection Status or the Protection Register until another command is issued. Refer to Table 7, Read Electronic Signature, Tables 8 and 9, Word and Byte-wide Read Protection Register and Fig- ure 8, Protection Register Memory Map for infor- mation on the addresses. Read Query Command. The Read Query Com- mand is used to read data from the Common Flash Interface (CFI) Memory Area. One Bus Write cycle is required to issue the Read Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash In- terface Memory Area. See Appendix B, Tables 26, 27, 28, 29, 30 and 31 for details on the information contained in the Common Flash Interface (CFI) memory area. Read Status Register Command. The Read Sta- tus Register command is used to read the Status Register. One Bus Write cycle is required to issue the Read Status Register command. As the device contains two Status Registers (one for each inter- nal memory) the command must be issued to the same address as the previous operation (Block Erase, Write to Buffer, Word Program etc.). Once the command is issued subsequent Bus Read op- erations to the same internal memory (A23 Low or A23 High depending on where the command was issued to) read the Status Register until another command is issued. If the Bus Read operation is issued to the other internal memory, then the other Status Register will be read, giving the status of the last command issued in the other internal memory. The Status Register information is present on the output data bus (DQ1-DQ7) when the device is en- abled and Output Enable is Low, VIL. See the section on the Status Register and Table 11 for details on the definitions of the Status Reg- ister bits Clear Status Register Command. The Clear Sta- tus Register command can be used to reset bits 1, 3, 4 and 5 in the Status Register to ‘0’. One Bus Write is required to issue the Clear Status Register command. The command must be issued to the same address as the previous operation (Block Erase, Write to Buffer, Word Program etc.). The bits in the Status Register are sticky and do not automatically return to ‘0’ when a new Write to Buffer and Program, Erase, Block Protect, Block Unprotect or Protection Register Program com- mand is issued. If any error occurs then it is essen- tial to clear any error bits in the Status Register by issuing the Clear Status Register command before attempting a new Program, Erase or Resume command. Block Erase Command. The Block Erase com- mand can be used to erase a block. It sets all of the bits in the block to ‘1’. All previous data in the block is lost. If the block is protected then the Erase operation will abort, the data in the block will not be changed and the Status Register will output the error. Two Bus Write operations are required to issue the command; the second Bus Write cycle latches the block address in the internal state machine and starts the Program/Erase Controller. Once the command is issued subsequent Bus Read opera- tions read the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits. During Erase, the device being erased will only ac- cept the Read Status Register and Program/Erase Suspend commands, ignoring all other com- mands. The device not being erased will accept |
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