SI7682DP datasheet(3/7 Pages) VISHAY

3 / 7 page

Document Number: 73350

S09-0272-Rev. B, 16-Feb-09

www.vishay.com

Vishay Siliconix

Si7682DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.3

0.6

0.9

1.2

1.5

VGS = 10 thru 4 V

3 V

VDS - Drain-to-Source Voltage (V)

0.006

0.008

0.010

0.012

0.014

0.016

1020304050

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

ID = 11 A

Qg - Total Gate Charge (nC)

VDS = 10 V

VDS = 20 V

VDS = 15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.0

1.4

1.8

2.2

2.6

3.0

25 °C

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

400

800

1200

1600

2000

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

VGS = 10 V

TJ - Junction Temperature (°C)

VGS = 4.5 V

ID = 12 A

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