SI7682DP datasheet(4/7 Pages) VISHAY

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Document Number: 73350

S09-0272-Rev. B, 16-Feb-09

Vishay Siliconix

Si7682DP

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

0.001

0.00

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

0.1

0.01

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.01

0.02

0.03

0.04

0.05

02468

ID = 11 A

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

120

200

Time (s)

160

110

0.1

0.01

0.001

Safe Operating Area, Junction-to-Ambient

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1 ms

10 ms

100 ms

1 s

10 s

Limited by

RDS(on)*

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