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AFE5804ZCF Datasheet(PDF) 51 Page - Texas Instruments |
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AFE5804ZCF Datasheet(HTML) 51 Page - Texas Instruments |
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51 / 63 page ![]() A1 A2 To Attenuator 8kW 8kW 7pF 0.1mF C IN ³ m 0.1 F V B (+2.4V) IN V BL T/R AFE5804 AFE5804 www.ti.com SBOS442C – JUNE 2008 – REVISED OCTOBER 2011 APPLICATION INFORMATION The LNA closed-loop architecture is internally ANALOG INPUT AND LNA compensated for maximum stability without the need for external compensation components (inductors or While the LNA is designed as a fully differential capacitors). At the same time, the total input amplifier, it is optimized to perform a single-ended capacitance is kept to a minimum with only 16pF. input to differential output conversion. A simplified This architecture minimizes any loading of the signal schematic of an LNA channel is shown in Figure 101. source that may otherwise lead to a A bias voltage (VB) of +2.4V is internally applied to frequency-dependent voltage divider. Moreover, the the LNA inputs through 8k Ω resistors. In addition, the closed-loop design yields very low offsets and offset dedicated signal input (IN pin) includes a pair of drift; this consideration is important because the LNA back-to-back diodes that provide a coarse input directly drives the subsequent voltage-controlled clamping function in case the input signal rises to attenuator. very large levels, exceeding 0.6VPP. This configuration prevents the LNA from being driven into The LNA of the AFE5804 uses the benefits of a a severe overload state, which may otherwise cause bipolar process technology to achieve an an extended overload recovery time. The integrated exceptionally low noise voltage of 0.75nV/ √Hz, and a diodes are designed to handle a dc current of up to low current noise of only 3pA/ √Hz (in TGC mode 1). approximately 5mA. Depending on the application With these input-referred noise specifications, the requirements, the system overload characteristics AFE5804 achieves very low noise figure numbers may be improved by adding external Schottky diodes over a wide range of source resistances and at the LNA input, as shown in Figure 101. frequencies (see the graph, Noise Figure vs Frequency Over RS in the Typical Characteristics). As Figure 101 also shows, the complementary LNA The optimal noise power matching is achieved for input (VBL pin) is internally decoupled by a small source impedances of around 200 Ω. Further details capacitor. Furthermore, for each input channel, a of the AFE5804 input noise performance are shown separate VBL pin is brought out for external in the Typical Characteristic graphs. bypassing. This bypassing should be done with a small, 0.1 μF (typical) ceramic capacitor placed in Table 18. Noise Figure versus close proximity to each VBL pin. Attention should be Source Resistance (RS) at 2MHz given to provide a low-noise analog ground for this bypass capacitor. A noisy ground potential may RS (Ω) NOISE FIGURE (dB) cause noise to be picked up and injected into the 50 2.1 signal path, leading to higher noise levels. 200 1.1 400 1.2 1000 1.9 Figure 101. LNA Channel (Simplified Schematic) Copyright © 2008–2011, Texas Instruments Incorporated 51 |
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