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STLD200N4F6AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STLD200N4F6AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() January 2016 DocID028892 Rev 1 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.st.com STLD200N4F6AG Automotive N- channel 40 V, 1.27 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 dual side cooling Datasheet - preliminary data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STLD200N4F6AG 40 V 1.5 mΩ 120 A Designed for automotive applications Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STLD200N4F6AG 200 PowerFLAT™ 5x6 dual side cooling Tape and reel D(5, 6, 7, 8) G(4) S(1, 2, 3) |
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