STLD200N4F6AG datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STLD200N4F6AG

Description	Automotive N-channel 40 V, 1.27 mΩ typ., 120 A STripFET™F6 Power MOSFET in a PowerFLAT™5x6 dual side cooling

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STLD200N4F6AG

4/12

DocID028892 Rev 1

Electrical characteristics

(TC= 25 °C unless otherwise specified)

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage Drain

current

VGS = 0 V, VDS = 16 V

µA

VGS = 0 V, VDS = 16 V,

Tj = 125 °C

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 75 A

1.27

1.50

mΩ

VGS = 6.5 V, ID = 75 A

1.48

2.00

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 10 V, f = 1 MHz,

VGS = 0 V

10700

Coss

Output capacitance

1530

Crss

Reverse transfer

capacitance

1100

Total gate charge

VDD = 32 V, ID = 90 A,

VGS = 10 V (see Figure 14:

"Test circuit for gate charge

behavior")

172

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 90 A

RG = 30

Ω, VGS = 10 V (see

Figure 13: "Test circuit for

resistive load switching times")

150

Rise time

440

td(off)

Turn-off-delay time

600

Fall time

410

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