DocID024891 Rev 1

3/10

FERD40U45C

Characteristics

10

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average forward current versus

ambient temperature (

PF(AV) (W)

0

2

4

6

8

10

12

14

16

0

5

10

15

20

25

30

T

tp

d = 1

d = 0.5

d = 0.2

d = 0.1

d = 0.05

IF(AV) (A)

IF(AV) (A)

0

5

10

15

20

25

0

25

50

75

100

125

150

175

Tamb (°C)

T

tp

Figure 3. Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 4. Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp (s)

IR (mA)

1.E-01

1.E+00

1.E+01

1.E+02

0

5

10

15

20

25

30

35

40

45

VR (V)

Figure 5. Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 6. Forward voltage drop versus forward

current (typical values, per diode)

C (pF)

100

1000

10000

1

10

100

F=1MHz

VR (V)

IF (A)

0.1

1.0

10.0

100.0

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60

VF (V)