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STD4NK100Z Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD4NK100Z
Description  Very low intrinsic capacitance
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD4NK100Z Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
April 2015
DocID022821 Rev 2
1/16
STD4NK100Z
Automotive-grade N-channel 1000 V, 5.6
Ω typ., 2.2 A
SuperMESH™ Power MOSFET Zener-protected in a DPAK
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and
AEC-Q101 qualified
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
Applications
• Switching application
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics’ SuperMESH™ technology,
achieved through optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Note:
HTRB test has been performed at 80% of V(BR)DSS according to AEC-Q101 rev. C. All the
other tests have been done according to the new rev. D.
Order code
VDSS
RDS(on)max
ID
STD4NK100Z
1000 V
6.8
Ω
2.2 A
Table 1. Device summary
Order code
Marking
Package
Packaging
STD4NK100Z
4NK100Z
DPAK
Tape and reel
www.st.com


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