DocID022821 Rev 2

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STD4NK100Z

Electrical characteristics

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The built-in back-to-back Zener diodes have specifically been designed to enhance the

device's ESD capability. In this respect the Zener voltage is appropriate to achieve an

efficient and cost-effective intervention to protect the device's integrity. These integrated

Zener diodes thus avoid the usage of external components.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

2.2

A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

8.8

A

(2)

2.

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward on voltage

-

1.6

V

Reverse recovery time

di/dt = 100 A/µs,

(see Figure 14)

-

584

ns

Reverse recovery charge

-

2.3

µC

Reverse recovery current

-

8

A

Reverse recovery time

di/dt = 100 A/µs,

(see Figure 14)

-

628

ns

Reverse recovery charge

-

2.5

µC

Reverse recovery current

-

8.1

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

30

-

V