STD4NK100Z datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STD4NK100Z

4/16

DocID022821 Rev 2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

1000

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 1000 V,

VDS = 1000 V, Tc = 125 °C

µA

IGSS

Gate body leakage current

(VGS = 0)

VGS = ± 20 V

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 1.1 A

5.6

6.8

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =25 V, f=1 MHz,

VGS=0

601

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-12

Coss. eq

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 V to 800 V

td(on)

Turn-on delay time

VDD=500 V, ID= 1.25 A,

RG=4.7 Ω, VGS=10 V

(see Figure 16)

-15

Rise time

7.5

td(off)

Off-voltage rise time

Fall time

Total gate charge

VDD=800 V, ID = 2.5 A

VGS =10 V

(see Figure 15)

-18

Qgs

Gate-source charge

3.6

Qgd

Gate-drain charge

9.2

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