STGIPN3H60-H datasheet(8/23 Pages) STMICROELECTRONICS

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Electrical characteristics

STGIPN3H60-H

8/23

DocID024132 Rev 4

Electrical characteristics

3.1

Inverter part

TJ = 25 °C unless otherwise specified.

Table 7: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector-emitter saturation

voltage

VCC = Vboot = 15 V, VIN(1) = 0 to 5 V, IC = 1 A

2.15

2.6

VCC = Vboot = 15 V, VIN(1) = 0 to 5 V, IC = 1 A,

TJ = 125 °C

1.65

ICES

Collector-cut off current

(VIN(1)

= 0 “logic state”)

VCE = 550 V, VCC = VBoot = 15 V

250

µA

Diode forward voltage

VIN(1)

= 0 “logic state”, IC = 1 A

1.7

Notes:

(1)Applied between HINi, LINi and GND for i = U, V, W.

Table 8: Inductive load switching time and energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ton(1)

Turn-on time

VDD = 300 V,

VCC = Vboot = 15 V,

VIN(2) = 0 to 5 V,

IC = 1 A

(see Figure 4: "Switching time definition")

275

tc(on)(1)

Crossover time (on)

toff(1)

Turn-off time

890

tc(off)(1)

Crossover time (off)

125

trr

Reverse recovery time

Eon

Turn-on switching energy

µJ

Eoff

Turn-off switching energy

Notes:

(1)tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under

the internally given gate driving condition.

(2)Applied between HINi, LINi and GND for i = U, V, W.

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