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STL4P2UH7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL4P2UH7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() This is information on a product in full production. July 2014 DocID025028 Rev 3 1/13 STL4P2UH7 P-channel 20 V, 0.087 Ω typ., 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet - production data Figure 1. Internal schematic diagram Features • Ultra logic level • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Applications • Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. 1(D) 2(D) 3(G) 6(D) 5(D) 4(S) D S AM11269v1 PowerFLAT™ 2x2 1 2 3 6 5 4 1 2 3 Order code VDS RDS(on) max ID STL4P2UH7 20 V 0.1 Ω @ 4.5 V 4 A Table 1. Device summary Order code Marking Package Packaging STL4P2UH7 4L2U PowerFLAT™ 2x2 Tape and reel www.st.com |
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