STL4P2UH7 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STL4P2UH7

4/13

DocID025028 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 250 µA

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 20 V

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 8 V

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

0.4

RDS(on)

Static drain-source

on- resistance

VGS= 4.5 V, ID = 2 A

0.087

0.1

Ω

VGS= 2.5 V, ID = 2 A

0.11

0.13

Ω

VGS= 1.8 V, ID = 2 A

0.145

0.18

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 10 V, f = 1 MHz

510

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-44

Total gate charge

VDD = 10 V, ID = 3 A,

VGS = 4.5 V

(see Figure 14)

-4.8

Qgs

Gate-source charge

0.7

Qgd

Gate-drain charge

0.8

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

VDD = 10 V, ID = 1.5 A,

RG = 4.7 Ω, VGS = 4.5 V

(see Figure 15)

-9

Rise time

td(off)

Turn-off delay time

Fall time

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