DocID025028 Rev 3

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STL4P2UH7

Electrical characteristics

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For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

4

A

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

16

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1

V

Reverse recovery time

-12.8

ns

Reverse recovery charge

-

5

nC

Reverse recovery current

-

0.8

A