A6984 datasheet(8/47 Pages) STMICROELECTRONICS

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Electrical characteristics

A6984

8/47

DocID030396 Rev 1

IQ OPVIN

Quiescent current from VIN

LCM - SWO

VREF < VFB < VOVP (SLEEP)

VBIAS = 3.3 V

(2)

A

LCM - NO SWO

VREF < VFB < VOVP (SLEEP)

VBIAS = GND

(2)

160

230

LNM - SWO

VREF < VFB < VOVP

VBIAS = 3.3 V

-11

LNM - NO SWO

VREF < VFB < VOVP

VBIAS = GND

200

320

440

IQ OPVBIAS Quiescent current from VBIAS

LCM - SWO

VREF < VFB < VOVP (SLEEP)

VBIAS = 3.3 V

(2)

150

200

LNM - SWO

VREF < VFB < VOVP

VBIAS = 3.3 V

180

300

390

Enable

EN thresholds

Device inhibited

1.1

Device enabled

2.6

EN hysteresis

(3)

-650

Overvoltage protection

VOVP

Overvoltage trip (VOVP/VREF)

Rising edge

PGOOD

VPGD L

Power good LOW threshold

VFB rising edge

(PGOOD high impedance)

(3)

-90

VFB falling edge

(PGOOD low impedance)

-84

VPGD H

Power good HIGH threshold

Internal FB rising edge

(PGOOD low impedance)

VFB = VCC

118

123

128

Internal FB falling edge

(PGOOD high impedance)

VFB = VCC

(3)

100

VPGOOD

PGOOD open collector output

VIN > VIN_UVLO_H,

VFB=GND

4 mA sinking load

0.6

2.9 < VIN < VIN_UVLO_H

100

A sinking load

0.6

Table 5. Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max. Unit

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