L6564H datasheet(10/35 Pages) STMICROELECTRONICS

10 / 35 page

Electrical characteristics

L6564H

10/35

Doc ID 022960 Rev 2

Output max. slope

VMULT = 0 to 0.4 V, VVFF = 1 V

VCOMP = upper clamp

1.33

1.66

V/V

Gain (2)

VMULT = 1 V, VCOMP = 4 V

0.375

0.45

0.525

Error amplifier

VINV

Voltage feedback input

threshold

TJ = 25 °C

2.475

2.5

2.525

10.3 V < VCC < 22.5 V

(2)

2.455

2.545

Line regulation

VCC = 10.3 V to 22.5 V

IINV

Input bias current

VINV = 0 to 4 V

-0.2

-1

µA

VINVCLAMP Internal clamp level

IINV = 1 mA

Voltage gain

Open loop

Gain-bandwidth product

MHz

ICOMP

Source current

VCOMP = 4 V, VINV = 2.4 V

Sink current

VCOMP = 4 V, VINV = 2.6 V

2.5

4.5

VCOMP

Upper clamp voltage

ISOURCE = 0.5 mA

5.7

6.2

6.7

Burst-mode voltage

(1)

2.3

2.4

2.5

Lower clamp voltage

ISINK = 0.5 mA

(1)

2.1

2.25

2.4

Current sense comparator

ICS

Input bias current

VCS = 0

µA

tLEB

Leading edge blanking

100

150

250

td(H-L)

Delay to output

100

200

300

VCSclamp

Current sense reference clamp

VCOMP = upper clamp,

VMULT =1 V, VVFF = 1 V

1.0

1.08

1.16

Vcsofst

Current sense offset

VMULT = 0, VVFF = 3 V

VMULT = 3 V, VVFF = 3 V

Boost inductor saturation detector

VCS_th

Threshold on current sense

(1)

1.6

1.7

1.8

IINV

E/A input pull-up current

After VCS > VCS_th, before

restarting

510

µA

PFC_OK functions

IPFC_OK

Input bias current

VPFC_OK = 0 to 2.6 V

-0.1

-1

µA

VPFC_OK_C Clamp voltage

IPFC_OK = 1 mA

9.5

VPFC_OK_S OVP threshold

(1) voltage rising

2.435

2.5

2.565

VPFC_OK_R Restart threshold after OVP

(1) voltage falling

2.34

2.4

2.46

Table 4.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

∆V

MULT

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