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STGFW20H65FB Datasheet(PDF) 3 Page - STMicroelectronics |
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STGFW20H65FB Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 20 page ![]() DocID026826 Rev 1 3/20 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-247 TO-3P TO-3PFP VCES Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 °C 40 A IC Continuous collector current at TC = 100 °C 20 A ICP (1) 1. Pulse width limited by maximum junction temperature. Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 168 52 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature - 55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit TO-3PF TO-247 TO-3P RthJC Thermal resistance junction-case 2.9 0.9 °C/W RthJA Thermal resistance junction-ambient 50 °C/W |
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