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STGFW20H65FB Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGFW20H65FB
Description  Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGFW20H65FB Datasheet(HTML) 5 Page - STMicroelectronics

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DocID026826 Rev 1
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STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 20 A,
RG = 10 Ω, VGE = 15 V,
see Figure 26
-30
-
ns
tr
Current rise time
-
11
-
ns
(di/dt)on
Turn-on current slope
-
1400
-
A/µs
td(off)
Turn-off delay time
139
-
ns
tf
Current fall time
-
20
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the external diode. Turn-on times and energy have been
measured applying as freewheeling an external SiC diode STPSC206W
Turn-on switching losses
-
77
-
µJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
170
-
µJ
Ets
Total switching losses
-
247
-
µJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 20 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 26
-29
-
ns
tr
Current rise time
-
12
-
ns
(di/dt)on
Turn-on current slope
-
1352
-
A/µs
td(off)
Turn-off delay time
-
147
-
ns
tf
Current fall time
-
38
-
ns
Eon
(1)
Turn-on switching losses
-
88
-
µJ
Eoff
(2)
Turn-off switching losses
-
353
-
µJ
Ets
Total switching losses
-
441
-
µJ



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