STGFW30H65FB datasheet(7/20 Pages) STMICROELECTRONICS

7 / 20 page

DocID025849 Rev 5

7/20

STGFW30H65FB, STGW30H65FB, STGWT30H65FB

Electrical characteristics

Figure 8. Power dissipation vs. case

temperature for TO-247 and TO-3P

Figure 9. Power dissipation vs. case

temperature for TO-3PF

Ptot

150

100

TC(°C)

(W)

100 125 150

200

175

250

VGE ≥ 15V, TJ ≤ 175 °C

GIPG280120141353FSR

Ptot

TC(°C)

(W)

100

125

150

VGE ≥ 15V, TJ ≤ 175 °C

GIPD060320141444FSR

Figure 10. Forward bias safe operating area for

TO-247 and TO-3P

Figure 11. Forward bias safe operating area for

TO-3PF

100

0.1

VCE(V)

(A)

100

10 μs

100 μs

1 ms

(single pulse TC= 25°C,

TJ ≤ 175 °C; VGE=15V)

GIPG280120141450FSR

100

0.1

VCE(V)

(A)

100

10 μs

100 μs

1 ms

(single pulse T

C= 25 °C,

TJ ≤ 175 °C; VGE=15V)

GIPD060320141531FSR

Figure 12. Collector current vs. switching

frequency for TO-247 and TO-3P

Figure 13. Collector current vs. switching

frequency for TO-3PF

110

Ic [A]

f [kHz]

rectangular current shape,

(duty cycle=0.5, V

CC = 400V, R =10

GE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

GIPG280120141713FSR

110

Ic [A]

f [kHz]

rectangular current shape,

(duty cycle=0.5, V

CC = 400V, R =10

GE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

GIPD060320141543FSR

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