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STGFW30H65FB Datasheet(PDF) 8 Page - STMicroelectronics

Part # STGFW30H65FB
Description  Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGFW30H65FB Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGFW30H65FB, STGW30H65FB, STGWT30H65FB
8/20
DocID025849 Rev 5
Figure 14. Normalized VGE(th) vs. junction
temperature
Figure 15. Normalized V(BR)CES vs. junction
temperature
VGE(th)
(norm)
0.8
0.7
0.6
-50
TJ(°C)
0
50
100
150
0.9
1.0
VCE= VGE
IC= 1mA
AM16060v1
V(BR)CES
(norm)
1.1
1.0
0.9
-50
TJ(°C)
0
50
100
150
IC= 2mA
AM16059v1
Figure 16. Switching losses vs temperature
Figure 17. Switching losses vs gate resistance
E (μJ)
400
200
0
20
TJ(°C)
40
60
80
100
600
VCC= 400V, VGE= 15V
Rg= 10Ω, IC= 30A
120
EON
EOFF
140 160
GIPG280120141531FSR
E (μJ)
420
20
3
RG(
Ω)
10
17
24
620
VCC= 400V, VGE= 15V
IC= 30A, TJ= 175 °C
31
EON
EOFF
38
45
220
820
1020
GIPG280120141535FSR
Figure 18. Switching losses vs collector current Figure 19. Switching losses vs collector emitter
voltage
E (μJ)
400
200
0
0
IC(A)
20
40
60
600
VCC= 400V, VGE= 15V
Rg= 10Ω, TJ= 175°C
EON
EOFF
1000
800
1200
GIPG280120141605FSR
E (μJ)
400
200
0
150
VCE(V)
250
350
450
600
TJ= 175°C, VGE= 15V
Rg= 10Ω, IC= 30A
EON
EOFF
800
GIPG280120141609FSR



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