STGFW30H65FB datasheet(3/20 Pages) STMICROELECTRONICS

Part #	STGFW30H65FB

Description	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

PDF	20 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 20 page

DocID025849 Rev 5

3/20

STGFW30H65FB, STGW30H65FB, STGWT30H65FB

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-247

TO-3P

TO-3PF

VCES

Collector-emitter voltage (VGE = 0)

650

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP

(1)

Pulse width limited by maximum junction temperature.

Pulsed collector current

120

VGE

Gate-emitter voltage

±20

PTOT

Total dissipation at TC = 25 °C

260

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink (t = 1 s;

Tc =25°C)

3.5

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-3PF

TO-247

TO-3P

RthJC

Thermal resistance junction-case

2.60

0.58

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

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