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STGWA80H65FB Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGWA80H65FB
Description  Low thermal resistance
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA80H65FB Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
June 2014
DocID026401 Rev 1
1/18
18
STGW80H65FB, STGWA80H65FB,
STGWT80H65FB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
TO-247
1
2
3
TO-3P
1
2
3
TAB
TO-247 long leads
C (2 or TAB)
E (3)
G (1)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW80H65FB
GW80H65FB
TO-247
Tube
STGWA80H65FB
GWA80H65FB
TO-247 long leads
Tube
STGWT80H65FB
GWT80H65FB
TO-3P
Tube
www.st.com


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