STL15N65M5 datasheet(3/16 Pages) STMICROELECTRONICS

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STL15N65M5

Electrical ratings

DocID023633 Rev 2

3/16

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

650

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM (1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

2.5

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

160

dv/dt (2)

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

°C

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDS(peak) ≤ V(BR)DSS, VDD = 400 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.4

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

°C/W

Notes:

(1)When mounted on 1inch² FR-4 board, 2 oz Cu.

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