STL15N65M5 datasheet(5/16 Pages) STMICROELECTRONICS

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STL15N65M5

Electrical characteristics

DocID023633 Rev 2

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Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(V)

Voltage delay time

VDD = 400 V, ID = 7 A,

= 4.7 Ω, VGS = 10 V

(see Figure 17: "Test circuit for

inductive load switching and

diode recovery times" and

Figure 20: "Switching time

waveform")

tr(V)

Voltage rise time

tf(I)

Current fall time

tc(off)

Crossing time

12.5

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD(2)

Forward on voltage

ISD = 10 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 10 A, di/dt = 100 A/µs

VDD = 100 V

(see Figure 17: "Test circuit for

inductive load switching and

diode recovery times")

244

Qrr

Reverse recovery charge

2.35

µC

IRRM

Reverse recovery current

19.2

trr

Reverse recovery time

ISD = 10 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 17: "Test circuit for

inductive load switching and

diode recovery times")

308

Qrr

Reverse recovery charge

2.93

µC

IRRM

Reverse recovery current

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

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