This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

June 2013

DocID023634 Rev 2

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STL18N65M5

N-channel 650 V, 0.215

Ω typ., 15 A MDmesh™ V Power MOSFET

in a PowerFLAT™ 5x6 HV package

Datasheet

Figure 1. Internal schematic diagram

Features

• Extremely large avalanche performance

• Gate charge minimized

• Very low intrinsic capacitance

• 100% avalanche tested

Applications

• Switching applications

Description

This device is an N-channel MDmesh™ V Power

MOSFET based on an innovative proprietary

vertical process technology, which is combined

with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

AM15540v2

5

6

7

8

12

3

4

Top View

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

PowerFLAT™ 5x6 HV

1

2

3

4

Order code

STL18N65M5

710 V

0.240

Ω

1.

by package.

Table 1. Device summary

Order code

Marking

Package

Packaging

STL18N65M5

18N65M5

PowerFLAT™ 5x6 HV

Tape and reel

www.st.com