STL18N65M5 datasheet(5/17 Pages) STMICROELECTRONICS

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STL18N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 9.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17 and 20)

-36

Rise time

td(off)

Turn-off delay time

Fall time

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

(1)

Source-drain current

ISDM

(1)

(2)

The value is rated according to Rthj-case and limited by package.

Pulse width limited by safe operating area

Source-drain current (pulsed)

VSD

(3)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 15 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 15 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 17)

-290

Qrr

Reverse recovery charge

3.4

µC

IRRM

Reverse recovery current

23.5

trr

Reverse recovery time

ISD = 15 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 17)

-352

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

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